MOCVD growth and annealing characteristics of Mg-doped AIGaN films
- Author(s):
- Publication title:
- Sixth International Conference on Thin Film Physics and Applications : 25-28 September 2007, Shanghai, China
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6984
- Pub. Year:
- 2008
- Page(from):
- 69842N-1
- Page(to):
- 69842N-4
- Pages:
- 4
- Pub. info.:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819471826 [0819471828]
- Language:
- English
- Call no.:
- P63600/6984
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
7
Conference Proceedings
Growth and characterization of AIGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications (Invited Paper) [6121-13]
SPIE - The International Society of Optical Engineering |
2
Conference Proceedings
The Temperature Dependence of In Desorption during InN Growth and Annealing
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Effects of Mg doping on the photoconductivity of GaN films deposited by MOCVD
SPIE-The International Society for Optical Engineering |
9
Conference Proceedings
Surface Roughness and Growth Texture of (Ba,Sr)TiO3 Thin Films Formed by MOCVD
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
5
Conference Proceedings
Effects of the Al composition in AIGaN buffer layer on a-plane GaN films grown on r-plane sapphire substrate by MOCVD
Society of Photo-optical Instrumentation Engineers |
Electrochemical Society |
6
Conference Proceedings
THE GROWTH AND IN-SITU DOPING OF SiGe/Si STRAINED HETEROSTRUCTURES BY RTP/VLP-CVD
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |