Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

Author(s):

G. Chen ( Nanjing Univ., China )
Z. Y. Li ( Nanjing Electronic Devices Institute, China )
S. Bai ( Nanjing Electronic Devices Institute, China )
P. Han ( Nanjing Univ., China )

Publication title:

Sixth International Conference on Thin Film Physics and Applications : 25-28 September 2007, Shanghai, China

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6984

Pub. Year:

2008

Page(from):

69842L-1

Page(to):

69842L-4

Pages:

4

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471826 [0819471828]

Language:

English

Call no.:

P63600/6984

Type:

Conference Proceedings

Details

TDL ID:	ZA00052615
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Thin Film Physics and Applications
Conf. info. (Number):	2007 : 6th
Conf. info. (Venue):	Shanghai, China
Conf. info. (Date):	2007.09.25-2007.09.28
Note for article:	Sixth International Conference on Thin Film Physics and Applications, 25-28 September 2007, Shanghai, China - Session 3. Technology of Thin Films, 69842L, 6984-92

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