Sub-40-nm half-pitch double patterning with resist freezing process

Sub-40-nm half-pitch double patterning with resist freezing process

Author(s):

M. Hori ( JSR Corp., Japan )
T. Nagai ( JSR Corp., Japan )
A. Nakamura ( JSR Corp., Japan )
T. Abe ( JSR Corp., Japan )
G. Wakamatsu ( JSR Corp., Japan )

Publication title:

Advances in resist materials and processing technology XXV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6923

Pub. Year:

2008

Vol.:

1

Page(from):

69230H-1

Page(to):

69230H-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471086 [0819471089]

Language:

English

Call no.:

P63600/6923

Type:

Conference Proceedings

Details

TDL ID:	ZA00052554
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Materials and Processing Technology
Conf. info. (Number):	2008 : 25th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.02.25-2008.02.27
Note for article:	Advances in resist materials and processing technology XXV, 25-27 February 2008, San Jose, California, USA. Session 4. Materials and Processes for Double Patterning/Double Exposure, 69230H, 6923-17

Similar Items:

1 Conference Proceedings 30nm half-pitch metal patterning using Moti CD shrink technique and double patterning J. Versluijs, J.-F. De Marneffe, D. Goossens, M. Op de Beeck, T. Vandeweyer Society of Photo-optical Instrumentation Engineers	7 Conference Proceedings 45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning H. Dai, C. Bencher, Y. Chen, H. Woo, C. Ngai Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC M. O. de Beeck, J. Versluijs, V. Wiaux, T. Vandeweyer, I. Ciofi, H. Struyf, D. Hendrickx, J. V. Olmen SPIE - The International Society of Optical Engineering	8 Conference Proceedings Extension of 193 nm dry lithography to 45-nm half-pitch node: double exposure and double processing technique [6349-62] Biswas, A. M., Li, J., Hiserote, J. A., Melvin III, L. S. SPIE - The International Society of Optical Engineering
3 Conference Proceedings Spacer double patterning technique for sub-40nm DRAM manufacturing process development W. Shiu, W. Ma, H. W. Lee, J. S. Wu, Y. M. Tseng Society of Photo-optical Instrumentation Engineers	9 Conference Proceedings Evaluation of EUV resist materials for use at the 32 nm half-pitch node T. Wallow, C. Higgins, R. Brainard, K. Petrillo, W. Montgomery Society of Photo-optical Instrumentation Engineers
4 Conference Proceedings Pattern freezing process free litho-litho-etch double patterning T. Ando, M. Takeshita, R. Takasu, Y. Yoshii, J. Iwashita Society of Photo-optical Instrumentation Engineers	10 Conference Proceedings Performance of chemically amplified resists at half-pitch of 45 nm and below Y. Wei, M. Bender, W. Domke, A. Laessig, M. Sebald, S. Trogisch, D. Back SPIE - The International Society of Optical Engineering
5 Conference Proceedings Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning M. C. Chiu, B. S.-M. Lin, M. F. Tsai, Y. S. Chang, M. H. Yeh Society of Photo-optical Instrumentation Engineers	11 Conference Proceedings Ultra-low k1 oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method H. Nakamura, M. Omura, S. Yamashita, Y. Taniguchi, J. Abe, S. Tanaka, S. Inoue SPIE - The International Society of Optical Engineering
6 Conference Proceedings Sub-nm Screening Layer Approach for Ultra-Shallow Junction Formation Hori, M., Miyake, T., Hikazutani, K., Kataoka, Y., Nakamura, M., Wada, T., Kase, M. MRS - Materials Research Society	12 Conference Proceedings Repair specification study for half-pitch 32-nm patterns for EUVL H. Aoyama, T. Amano, Y. Nishiyamo, H. Shigemura, O. Suga Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12