Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

Author(s):

M. Leszczynski ( Institute of High Pressure Physics Unipress, Poland )
I. Grzegory ( Institute of High Pressure Physics Unipress, Poland )
M. Boćkowski ( Institute of High Pressure Physics Unipress, Poland )
B. Łucznik ( Institute of High Pressure Physics Unipress, Poland )
T. Suski ( Institute of High Pressure Physics Unipress, Poland )

Publication title:

Light-emitting diodes : research, manufacturing, and applications XII : 22-24 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6910

Pub. Year:

2008

Page(from):

69100G-1

Page(to):

69100G-10

Pages:

10

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470850 [0819470856]

Language:

English

Call no.:

P63600/6910

Type:

Conference Proceedings

Details

TDL ID:	ZA00052541
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Light-Emitting Diodes
Conf. info. (Number):	2008 : 12th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.22-2008.01.24
Note for article:	Light-emitting diodes: Research, Manufacturing, and Applications XII, 22-24 January 2008, San Jose, California, USA - Session 4. GaN Growth, Invited paper (69100G/6910-15)

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