Influence of nanocrystal distribution on electroluminescence from Si+-implanted SiO2 thin films

Influence of nanocrystal distribution on electroluminescence from Si⁺-implanted SiO₂ thin films

Author(s):

L. Ding ( Nanyang Technological Univ., Singapore )
T. P. Chen ( Nanyang Technological Univ., Singapore )
M. Yang ( Nanyang Technological Univ., Singapore )
F. R. Zhu ( Institute of Materials Research and Engineering, Singapore )

Publication title:

Silicon photonics III : 21-24 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6898

Pub. Year:

2008

Page(from):

68980H-1

Page(to):

68980H-9

Pages:

9

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470737 [0819470732]

Language:

English

Call no.:

P63600/6898

Type:

Conference Proceedings

Details

TDL ID:	ZA00052529
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Silicon Photonics
Conf. info. (Number):	2008 : 3rd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.21-2008.01.24
Note for article:	Silicon photonics III, 21-24 January 2008, San Jose, California, USA - Session 4. Emitters (68980H/6898-13)

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