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Epitaxial lateral overgrowth of (1100) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition

Author(s):
  • X. Ni ( Virginia Commonwealth Univ., USA )
  • Ü. Özgür ( Virginia Commonwealth Univ., USA )
  • S. Chevtchenko ( Virginia Commonwealth Univ., USA )
  • J. Nie ( Virginia Commonwealth Univ., USA )
  • H. Morkoç ( Virginia Commonwealth Univ., USA )
Publication title:
Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6894
Pub. Year:
2008
Page(from):
689420-1
Page(to):
689420-5
Pages:
5
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470690 [0819470694]
Language:
English
Call no.:
P63600/6894
Type:
Conference Proceedings

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