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Development of UV-photocathodes using GaN film on Si substrate

Author(s):
  • S. Fuke ( Shizuoka Univ., Japan )
  • M. Sumiya ( National Institute for Materials Science, Japan )
  • T. Nihashi ( Hamamatsu Photonics K.K., Japan )
  • M. Hagino ( Hamamatsu Photonics K.K., Japan )
  • M. Matsumoto ( Hamamatsu Photonics K.K., Japan )
Publication title:
Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6894
Pub. Year:
2008
Page(from):
68941F-1
Page(to):
68941F-7
Pages:
7
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470690 [0819470694]
Language:
English
Call no.:
P63600/6894
Type:
Conference Proceedings

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