Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

Author(s):

J. C. Moore ( Longwood Univ., USA )
M. A. Reshchikov ( Virginia Commonwealth Univ., USA )
J. E. Ortiz ( Virginia Commonwealth Univ., USA )
J. Xie ( Virginia Commonwealth Univ., USA )
H. Morkoç ( Virginia Commonwealth Univ., USA )

Publication title:

Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6894

Pub. Year:

2008

Page(from):

68940B-1

Page(to):

68940B-9

Pages:

9

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470690 [0819470694]

Language:

English

Call no.:

P63600/6894

Type:

Conference Proceedings

Details

TDL ID:	ZA00052525
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2008 : 3rd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.21-2008.01.24
Note for article:	Gallium nitride materials and devices III, 21-24 January 2008, San Jose, California, USA - Session 3. Growth and Characterization (68940B/6894-10)

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