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A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy (HVPE)

Author(s):
Publication title:
Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6894
Pub. Year:
2008
Page(from):
689406-1
Page(to):
689406-9
Pages:
9
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470690 [0819470694]
Language:
English
Call no.:
P63600/6894
Type:
Conference Proceedings

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