Ultrafast time-resolved photoluminescence of Zn-Se-Te multilayers with type-II ZnTe/ZnSe quantum dots

Ultrafast time-resolved photoluminescence of Zn-Se-Te multilayers with type-II ZnTe/ZnSe quantum dots

Author(s):

M. C-K. Cheung ( Univ. at Buffalo, SUNY, USA )
I. R. Sellers ( Univ. at Buffalo, SUNY, USA )
I. L. Kuskovsky ( Queens College at CUNY, USA )
A. N. Cartwright ( Univ. at Buffalo, SUNY, USA )
B. D. McCombe ( Univ. at Buffalo, SUNY, USA )

Publication title:

Ultrafast phenomena in semiconductors and nanostructure materials XII : 20-23 January 2008, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6892

Pub. Year:

2008

Page(from):

68921A-1

Page(to):

68921A-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470676 [0819470678]

Language:

English

Call no.:

P63600/6892

Type:

Conference Proceedings

Details

TDL ID:	ZA00052523
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Ultrafast Phenomena in Semiconductors and Nanostructure Materials
Conf. info. (Number):	2008 : 12th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2008.01.20-2008.01.23
Note for article:	Ultrafast phenomena in semiconductors and nanostructure materials XII, 20-23 January 2008, San Jose, California, USA - Session 11. Widegap Semiconductors (68921A/6892-45)

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