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Plasma-induced damage in GaN-based light emitting diodes

Author(s):
  • Y. Li ( Institute of Semiconductors, China )
  • X. Yi ( Institute of Semiconductors, China )
  • X. Wang ( Institute of Semiconductors, China )
  • J. Guo ( Institute of Semiconductors, China )
  • L. Wang ( Engineering Research Ctr. for Semiconductor Lighting, China )
Publication title:
Solid state lighting and solar energy technologies : 12-14 November 2007, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6841
Pub. Year:
2008
Pt.:
A
Page(from):
68410X-1
Page(to):
68410X-6
Pages:
6
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819470164 [0819470163]
Language:
English
Call no.:
P63600/6841
Type:
Conference Proceedings

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