The electronic structure of the PbS(-1OO) with vacancy defect: first-principles study

The electronic structure of the PbS(-1OO) with vacancy defect: first-principles study

Author(s):

Z. -L. Ding ( Donghua Univ., China )
H. -Z. Xing ( Donghua Univ., China )
Y. Huang ( Shanghai Institute of Technical Physics, China )
X. -S. Chen ( Shanghai Institute of Technical Physics, China )

Publication title:

Infrared materials, devices, and applications : 12-15 November 2007, Beijing, China

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6835

Pub. Year:

2008

Page(from):

68350L-1

Page(to):

68350L-4

Pages:

4

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470102 [0819470104]

Language:

English

Call no.:

P63600/6835

Type:

Conference Proceedings

Details

TDL ID:	ZA00052466
Series ID:	PA00000029
Conf. info. (Name):	Photonics Asia : Infrared Materials, Devices, and Applications
Conf. info. (Number):	2007
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	2007.11.12-2007.11.15
Note for article:	Infrared materials, devices, and applications, 12-15 November 2007, Beijing, China - Infrared Materials/Devices and Their Application V (68350L/6835-21)

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