Enhanced electron injection in inverted top-emitting OLEDs with n-Si cathode by using Cs2C03 buffer layer

Enhanced electron injection in inverted top-emitting OLEDs with n-Si cathode by using C_s2C0₃ buffer layer

Author(s):

S. Chen ( Sun Yat-Sen Univ., China )
Y. Yuan ( Sun Yat-Sen Univ., China )
J. Lian ( Sun Yat-Sen Univ., China )
Z. Xie ( Sun Yat-Sen Univ., China )
X. Zhou ( Sun Yat-Sen Univ., China )

Publication title:

Light-emitting diode materials and devices II : 12-14 November 2007, Beijing, China

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6828

Pub. Year:

2008

Page(from):

68280O-1

Page(to):

68280O-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819470034 [0819470031]

Language:

English

Call no.:

P63600/6828

Type:

Conference Proceedings

Details

TDL ID:	ZA00052459
Series ID:	PA00000029
Conf. info. (Name):	Photonics Asia : Light-Emitting Diode Materials and Devices
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	2007.11.12-2007.11.14
Note for article:	Light-emitting diode materials and devices II, 12-14 November 2007, Beijing, China - Session 5. Organic Optoelectronic Devices II (68280O/6828-16)

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