Optical proximity correction for 0.13 µm SiGe:C BiCMOS

Optical proximity correction for 0.13 µm SiGe:C BiCMOS

Author(s):

S. Geisler ( Technische Fachhochschule Wildau, Germany )
J. Bauer ( IHP Microelectronics, Germany )
U. Haak ( IHP Microelectronics, Germany )
U. Jagdhold ( IHP Microelectronics, Germany )
R. Pliquett ( IHP Microelectronics, Germany )

Publication title:

EMLC 2008 : 24th European Mask and Lithography Conference : 21-24 January 2008, Dresden, Germany

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6792

Pub. Year:

2008

Page(from):

679210-1

Page(to):

679210-6

Pages:

6

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469564 [0819469564]

Language:

English

Call no.:

P63600/6792

Type:

Conference Proceedings

Details

TDL ID:	ZA00052423
Series ID:	PA00000029
Conf. info. (Name):	European Mask and Lithography Conference : EMLC
Conf. info. (Number):	2008 : 24th
Conf. info. (Venue):	Dresden, Germany
Conf. info. (Date):	2008.01.21-2008.01.24
Note for article:	24th European Mask and Lithography Conference : EMLC2008, 21-24 January 2008, Dresden, Germany - Poster Session (6792-30)

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