Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Multiplication characteristics of InP/InGaAs avalanche photodiodes with thick multiplication and charge layers

Author(s):: Y. Zhao ( Wuhan National Lab. for Optoelectonics, China )
Publication title:: Optoelectronic materials and devices II
Title of ser.:: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:: 6782
Pub. Year:: 2007
Vol.:: 1
Page(from):: 67820I-1
Page(to):: 67820I-9
Pages:: 9
Pub. info.:: Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:: 0277786X
ISBN:: 9780819469458 [0819469459]
Language:: English
Call no.:: P63600/6782
Type:: Conference Proceedings

Details

TDL ID:	ZA00052414
Series ID:	PA00000029
Conf. info. (Name):	Asia Communications and Photonics : Optoelectronic Materials and Devices
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	Wuhan, China
Conf. info. (Date):	2007.11.02-2007.11.05
Note for article:	Optoelectronic materials and devices II, 2-5 November 2007, Wuhan, China - Photonic Integration (6782-18)

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