InP nanowire photodetectors heteroepitaxially grown between silicon electrodes

InP nanowire photodetectors heteroepitaxially grown between silicon electrodes

Author(s):

A. Sarkar ( Univ. of California/Davis, USA )
A. Chaudhry ( Univ. of California/Davis, USA )
V. J. Logeeswaran ( Univ. of California/Davis, USA )
S. Yi ( Philips Lumileds Lighting Co., USA )
M. S. Islam ( Univ. of California/Davis, USA )

Publication title:

Nanophotonics for communication : materials, devices, and systems IV : 10-11 September 2007, Boston, Massachusetts, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6779

Pub. Year:

2007

Page(from):

67790K-1

Page(to):

67790K-7

Pages:

7

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469397 [0819469394]

Language:

English

Call no.:

P63600/6779

Type:

Conference Proceedings

Details

TDL ID:	ZA00052411
Series ID:	PA00000029
Conf. info. (Name):	Optics East : Nanophotonics for Communication
Conf. info. (Number):	2007 : 4th
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2007.09.10-2007.09.11
Note for article:	Nanophotonics for communication: Materials, Devices, and Systems IV, 10-11 September 2007, Boston, Massachusetts, USA - Session 4. Photonic Crystal-based Novel Devices (6779-19)

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