Growth kinetics of InP nanowires heteroepitaxially grown on a silicon surface

Growth kinetics of InP nanowires heteroepitaxially grown on a silicon surface

Author(s):

A. Sarkar ( Univ. of California, Davis, USA )
I. Kimukin ( Univ. of California, Davis, USA )
C. W. Edgar ( Univ. of California, Davis, USA )
S. Yi ( Agilent Technologies, USA )
C. Mitterbauer ( Univ. of California, Davis, USA )

Publication title:

Nanomaterial synthesis, interfacing, and intergrating devices, circuits, and systems II : 9 and 11 Septermber 2007, Boston, Massachusetts, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6768

Pub. Year:

2007

Page(from):

676804-1

Page(to):

676804-10

Pages:

10

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819469281 [0819469289]

Language:

English

Call no.:

P63600/6768

Type:

Conference Proceedings

Details

TDL ID:	ZA00052400
Series ID:	PA00000029
Conf. info. (Name):	Optics East : Nanomaterials Synthesis, Interfacing, and Integrating in Devices, Circuits, and Systems
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2007.09.09, 2007.09.11
Note for article:	Nanomaterials synthesis, interfacing, and integrating in devices, circuits, and systems II, 9 and 11 September 2007, Boston, Massachusetts, USA - Synthesis, Properties, Doping, and Characterization of Nanowires I (6768-03)

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