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Study of impacts of mask structure on hole pattern in EUVL

Author(s):
  • N. Iriki ( Semiconductor Leading Edge Technologies Inc., Japan )
  • Y. Arisawa ( Semiconductor Leading Edge Technologies Inc., Japan )
  • H. Aoyama ( Semiconductor Leading Edge Technologies Inc., Japan )
  • T. Tanaka ( Semiconductor Leading Edge Technologies Inc., Japan )
Publication title:
Photomask technology 2007
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6730
Pub. Year:
2007
Vol.:
3
Page(from):
67305K-1
Page(to):
67305K-10
Pages:
10
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819468871 [0819468878]
Language:
English
Call no.:
P63600/6730
Type:
Conference Proceedings

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