Practical use of hard mask process to fabricate fine photomasks for 45nm node and beyond

Practical use of hard mask process to fabricate fine photomasks for 45nm node and beyond

Author(s):

Y. Kushida ( Fujitsu Ltd., Japan )
H. Handa ( Fujitsu Ltd., Japan )
H. Maruyama ( Fujitsu Ltd., Japan )
Y. Abe ( Dai Nippon Printing Co., Ltd., Japan )
Y. Fujimura ( Dai Nippon Printing Co., Ltd., Japan )

Publication title:

Photomask technology 2007

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6730

Pub. Year:

2007

Vol.:

3

Page(from):

673045-1

Page(to):

673045-10

Pages:

10

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468871 [0819468878]

Language:

English

Call no.:

P63600/6730

Type:

Conference Proceedings

Details

TDL ID:	ZA00052371
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Photomask Technology 2007
Conf. info. (Number):	2007
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2007.09.18-2007.09.21
Note for article:	Photomask technology 2007, 18-21 September 2007, Monterey, California, USA - Poster session: Resist process and ETCH (6730-147)

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