Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks

Self-aligned resist patterning with 172nm and 193nm backside flood exposure on attenuated phase shift masks

Author(s):

J. Chun ( Hynix Semiconductor Inc., South Korea )
T. Ha ( Hynix Semiconductor Inc., South Korea )
H. Jung ( Hynix Semiconductor Inc., South Korea )
S. Jo ( Hynix Semiconductor Inc., South Korea )
O. Han ( Hynix Semiconductor Inc., South Korea )

Publication title:

Photomask technology 2007

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6730

Pub. Year:

2007

Vol.:

3

Page(from):

673044-1

Page(to):

673044-8

Pages:

8

Pub. info.:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819468871 [0819468878]

Language:

English

Call no.:

P63600/6730

Type:

Conference Proceedings

Details

TDL ID:	ZA00052371
Series ID:	PA00000029
Conf. info. (Name):	SPIE Photomask Technology : Photomask Technology 2007
Conf. info. (Number):	2007
Conf. info. (Venue):	Monterey, California, USA
Conf. info. (Date):	2007.09.18-2007.09.21
Note for article:	Photomask technology 2007, 18-21 September 2007, Monterey, California, USA - Poster session: Resist process and ETCH (6730-145)

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