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Effects of impurities with deep energy level in high biased field on delay time of semi-insulating GaAs photoconductive switches

Author(s):
  • H. Dai ( Xi'an Univ. of Technology (China) )
  • W. Shi ( Xi'an Univ. of Technology (China) )
  • J. Hou ( Ordnance Engineering College (China) )
Publication title:
International Symposium on Photoelectronic Detection and Imaging 2007, photoelectronic imaging and detection : 9-12 September 2007, Beijing China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6621
Pub. Year:
2008
Page(from):
66211Q-1
Page(to):
66211Q-6
Pages:
6
Pub. info.:
Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819467638 [0819467634]
Language:
English
Call no.:
P63600/6621
Type:
Conference Proceedings

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