Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

Author(s):

Lin Cheng ( Cree, Inc., Durham, NC, USA )
Michael J. O'Loughlin
Alexander V. Suvorov
Edward R. Van Brunt
Albert A. Burk

Publication title:

Compound semiconductors : thin-film photovoltaics, LEDs, and smart energy controls : symposia held April 1-5, 2013, San Francisco, California U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1538

Pub. Year:

2013

Page(from):

329

Page(to):

333

Pages:

5

Pub. info.:

Warrendale, Pa: Materials Research Society

ISSN:

02729172

ISBN:

9781605115153 [1605115150]

Language:

English

Call no.:

M23500/1538

Type:

Conference Proceedings

Details

TDL ID:	ZA00052291
Series ID:	PA00000011
Conf. info. (Name):	Compound Semiconductors: Thin-Film Photovoltaics, LEDs, and Smart Energy Controls
Conf. info. (Number):	2013
Conf. info. (Venue):	San Francisco, California U.S.A.
Conf. info. (Date):	2013.04.01-2013.04.05
Note for article:	2013 MRS Spring Meeting, Symposium C and Symposium FF, April 1-5, 2013, San Francisco, California, USA ; Devices and LEDs

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