GaN Quantum Dots as Charge Storage Elements for Memory Devices

GaN Quantum Dots as Charge Storage Elements for Memory Devices

Author(s):

Publication title:

Materials and physics of emerging nonvolatile memories : symposium held April 9-13, 2012, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1430

Pub. Year:

2012

Page(from):

29

Page(to):

34

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605114071 [1605114073]

Language:

English

Call no.:

M23500/1430

Type:

Conference Proceedings

Details

TDL ID:	ZA00051891
Series ID:	PA00000011
Conf. info. (Name):	2012 MRS Spring Meeting ; Symposium E, Materials and Physics of Emerging Nonvolatile Memories
Conf. info. (Number):	2012
Conf. info. (Venue):	San Francisco, CA
Conf. info. (Date):	2012.04.09-2012.04.13

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