Blank Cover Image

Activation Energy and Blistering Rate in Hydrogen-implanted Semiconductors

Author(s):
Publication title:
Properties and processes at the nanoscale - nanomechanics of material behavior : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1424
Pub. Year:
2012
Page(from):
79
Page(to):
84
Pages:
6
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781605114019 [1605114014]
Language:
English
Call no.:
M23500/1424
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Dose-Dependent "Activation Energy" for Blistering Phenomenon in Hydrogen-Implanted Silicon

Bedell, S. W., Lanford, W. A.

MRS - Materials Research Society
7 Conference Proceedings MeV ION BEAM APPLICATIONS IN III-V SEMICONDUCTORS

Elliman, R.G., Ridgway, M.C., Johnson, S.T., Williams, J.S.

Materials Research Society
2 Conference Proceedings Blistering and Splitting in Hydrogen-Implanted Silicon

Ntsoenzok, E., Assaf, H., Ashok, S.

Materials Research Society
8 Conference Proceedings Passive Films and Blistering of Titanium

Bedrossian, P. J., Farmer, J. C., McCright, R. D., Phinney, D. L., Estill, J. C.

Materials Research Society
3 Conference Proceedings Hydrogen Passivation Kinetics of Si Nanocrystals in SiO2

Wilkinson, Andrew R., Elliman, Robert G.

Materials Research Society
9 Conference Proceedings Hydrogen-Induced Blistering of SiC : The Role of Post-Implant Multi-Step Annealing Sequences

Malouf, G., Poust, B., Hayashi, S., Yoshizawa, G., Goorsky, M.S.

Trans Tech Publications
4 Conference Proceedings Boron Enhanced H Diffusion in Amorphous Si Formed by Ion Implantation

Brett C. Johnson, Armand J. Atanacio, Kathryn E. Prince, Jeffrey C. McCallum

Materials Research Society
10 Conference Proceedings Ion-Beam Modifiction of Semiconductors and Related Electronic Materials

Elliman,R.G.

Trans Tech Publications
5 Conference Proceedings Formation of Ti:sapphire via high-temperature processing of Ti-implanted sapphire crystals

McCallum, J.C.

SPIE - The International Society of Optical Engineering
11 Conference Proceedings AMORPHOUS TO POLYCRYSTALLINE TRANSFORMATION IN HIGH DOSE ION IMPLANTED SILICON

Nygren, E., McCallum, J. C., Thornton, R., Williams, J. S., Olson, G. L.

Materials Research Society
6 Conference Proceedings *CRYSTALLIZATION OF INDIUM IMPLANTYED AMORPHOUS SILICON

Nygren, E., Williams, J.S., Pogany, A., Elliman, R.G., Olson, G.L., McCallum, J.C.

Materials Research Society
12 Conference Proceedings A MODEL FOR BLISTERING AND SPLITI'ING OF HYDROGEN IMPLANTED SILICON AND ITS APPLICATION TO SILICON-ON-QUARTZ

Huang, L.-J., Tong, Q.-Y., Lee, T.-H., Chao, Y.-L., Goesele, U.M.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12