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Correlation Between Filament Distribution and Resistive Switching Property in Binary-Transition-Metal-Oxide Based Resistive Random Access Memory.

Author(s):
Publication title:
Functional metal oxide nanostructures : symposium held November 28-December 2 2011, Boston, Massachusetts, USA
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1406
Pub. Year:
2012
Page(from):
113
Page(to):
118
Pages:
6
Pub. info.:
Warrendale, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781605113838 [1605113832]
Language:
English
Call no.:
M23500/1406
Type:
Conference Proceedings

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