Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping

Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping

Author(s):

V. Kachkanov

Publication title:

Compound semiconductors for generating, emitting, and manipulating energy : symposium held November 28-December 2, 2011, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1396

Pub. Year:

2012

Page(from):

193

Page(to):

198

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113739 [1605113735]

Language:

English

Call no.:

M23500/1396

Type:

Conference Proceedings

Details

TDL ID:	ZA00051882
Series ID:	PA00000011
Conf. info. (Name):	2011 MRS Fall Meeting ; Symposium O, Compound Semiconductors for Generating, Emitting and Manipulating Energy
Conf. info. (Number):	2011
Conf. info. (Venue):	Boston, MA
Conf. info. (Date):	2011.11.28-2011.12.02

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