Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

Author(s):

Atsushi Nishikawa

Publication title:

Rare-earth doping of advanced materials for photonic applications--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1342

Pub. Year:

2012

Page(from):

9

Page(to):

14

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113197 [1605113190]

Language:

English

Call no.:

M23500/1342

Type:

Conference Proceedings

Details

TDL ID:	ZA00051871
Series ID:	PA00000011
Conf. info. (Name):	2011 Spring Meeting of the Materials Research Society ; Symposium V, Rare Earth Doping of Advanced Materials for Photonic Applications
Conf. info. (Number):	2011
Conf. info. (Venue):	San Francisco, CA
Conf. info. (Date):	2011.04.25-2011.04.29

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