Fabrication and Characterization of Copper Oxide Resistive Memory Devices

Fabrication and Characterization of Copper Oxide Resistive Memory Devices

Author(s):

S.M. Bishop

Publication title:

New functional materials and emerging device architectures for nonvolatile memories : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1337

Pub. Year:

2011

Page(from):

55

Page(to):

60

Pages:

6

Pub. info.:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781605113142 [160511314X]

Language:

English

Call no.:

M23500/1337

Type:

Conference Proceedings

Details

TDL ID:	ZA00051869
Series ID:	PA00000011
Conf. info. (Name):	2011 MRS Spring Meeting ; Symposium Q, New Functional Materials and Emerging Device Architectures for Nonvolatile Memories
Conf. info. (Number):	2011
Conf. info. (Venue):	San Francisco, CA
Conf. info. (Date):	2011.04.25-2011.04.29

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