TID and SEE Performance of a Commercial 0.13μm CMOS Technology

TID and SEE Performance of a Commercial 0.13μm CMOS Technology

Author(s):

Hänsler, Kurt

Marchioro, Alessandro

1 more

Publication title:

Proceedings of the 7th European Conference on Radiation and its Effects on Components and Systems : RADECS 2003, 15-19 September 2003, Noordwijk, the Netherlands

Title of ser.:

ESA SP

Ser. no.:

536

Pub. Year:

2004

Page(from):

119

Page(to):

126

Pages:

8

Pub. info.:

Noordwijk, the Netherlands: ESA Publication Division

ISSN:

03796566

ISBN:

9789290928461 [9290928468]

Language:

English

Call no.:

E11690/536

Type:

Conference Proceedings

Details

TDL ID:	ZA00051861
Series ID:	PA00000009
Conf. info. (Name):	7th European Conference on Radiation and its Effects on Components and Systems (RADECS 2003)
Conf. info. (Number):	7th
Conf. info. (Venue):	Noordwijk, The Netherlands
Conf. info. (Date):	2003.09.15-2003.09.19

Similar Items:

1 Conference Proceedings Impact of Thermal Budget on Junction Leakage in a 0.18 and 0.13 μm CMOS Technology Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Redolfi, A. Electrochemical Society	7 Conference Proceedings NBTI improvement for pMOS by Cl-contained 1st oxidation in 20A/65A dual-nitrided gate oxide of 0.13-μm CMOS technology Hao, C.-C., Chi, M.-H., Chen, C.-C., Lin, H.-J., Lin, Y.-F., Hsieh, C.H., Lee, C.H., Chang, K.H., Wu, H.T., Shen, C.-H. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Mask error enhancement factor for sub-0.13-μm lithography Tan,S.K., Lin,Q., Quan,C., Tay,C.J., See,A. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology Salvador Pinillos Gimenez, Rodrigo Mazzutti, Gomes Ferreira, João Antonio Martino Electrochemical Society
3 Conference Proceedings 0.13 μm CMOS Technology with Optimized Poly-Si/No-Oxide Gate Stack Kubicek, S., Jansen, P., Badenes, G., Schaekers, M., Koldyaev, V., Deferm, L., De Meyer, K., Kerr, D., Naem, A. Electrochemical Society	9 Conference Proceedings Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures L. M. Almeida, M. Bellodi Electrochemical Society
4 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology Lee, T.-K., Wang, Y.-C., Chi, M., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H. SPIE-The International Society for Optical Engineering	10 Conference Proceedings CAR dry etching technology to produce 0.13-μm reticle Chou, W.-Z., Tsai, F.-G., Tuo, C.C., Yoo, C.S., Tsai, T.S., Shue, L. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology Lee, T.-K., Wang, Y.-C., Chi, M.-H., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Simulation-based defect printability analysis for 0.13-μm technology Tinaztepe,C., Kagami,I. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Electrical Performance and Scalability of Ni-Monosilicide Towards sub 0.13 μm Technologies Lauwers, Anne, Potter, Muriel de, Lindsay, Richard, Steegen, An, Roelandts, Nico, Loosen, Fred, Vrancken, Christa, Maex, … Materials Research Society	12 Conference Proceedings Halo Optimization for 0.13µm SOI CMOS Technology P.G. Agopian, J.M. Arrabaça, J.A. Martino Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12