Thermal Stability of the HfO2/SiOxNy-Si Interface

Thermal Stability of the HfO₂/SiO_xN_y-Si Interface

Author(s):

K. P. Bastos

Publication title:

Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-28

Pub. Year:

2002

Page(from):

207

Page(to):

218

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773959 [1566773954]

Language:

English

Call no.:

E23400/200228

Type:

Conference Proceedings

Details

TDL ID:	ZA00051851
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
Conf. info. (Number):	2002
Conf. info. (Venue):	Salt Lake City, UT
Conf. info. (Date):	2002.10.20-2002.10.24

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