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Analysis of Electrically Active Defects at Si(1OO)-HfO2 Interfaco

Author(s):
B. J. O'Sullivan
E. O'Connor
P. K. Hurley
M. Modreanu
F. Roussel
N. Roussel
M. A. Audiar
J. P. Senateur
Q. Fang
I. W. Boyd
C. Jimenez
T. Leedham
7 more
Publication title:
Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-28
Pub. Year:
2002
Page(from):
207
Page(to):
218
Pages:
12
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773959 [1566773954]
Language:
English
Call no.:
E23400/200228
Type:
Conference Proceedings

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