Effect of Dynamic Bias Stress (AC) in Short-channel (L=1.5μm) p-Type Polycrystalline Silicon (Poly-Si) Thin Film Transistors (TFTs) on the Glass Substrate

Effect of Dynamic Bias Stress (AC) in Short-channel (L=1.5μm) p-Type Polycrystalline Silicon (Poly-Si) Thin Film Transistors (TFTs) on the Glass Substrate

Author(s):

Publication title:

Amorphous and polycrystalline thin-film silicon science and technology--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1321

Pub. Year:

2012

Page(from):

235

Page(to):

240

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112985 [1605112984]

Language:

English

Call no.:

M23500/1321

Type:

Conference Proceedings

Details

TDL ID:	ZA00050363
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2011
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2011.04.25-2011.04.29

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