Interface Study of SiO₂/ HfO₂/SiO₂ Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

Interface Study of SiO₂/ HfO₂/SiO₂ Stacks Used as InterPoly Dielectric for Future Generations of Embedded Flash Memories

Author(s):

A. Guiraud

Publication title:

Materials and devices for end-of-roadmap and beyond CMOS scaling : symposium held April 5-9, 2010, San Francisco, California

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1252

Pub. Year:

2010

Page(from):

125

Page(to):

132

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112299 [1605112291]

Language:

English

Call no.:

M23500/1252

Type:

Conference Proceedings

Details

TDL ID:	ZA00050337
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium I
Conf. info. (Number):	2010
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2010.04.05-2010.04.09

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