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Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO₂ and High-k Dielectrics

Author(s):
Publication title:
Materials and devices for end-of-roadmap and beyond CMOS scaling : symposium held April 5-9, 2010, San Francisco, California
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1252
Pub. Year:
2010
Page(from):
55
Page(to):
60
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112299 [1605112291]
Language:
English
Call no.:
M23500/1252
Type:
Conference Proceedings

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