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Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

Author(s):
M. Dudley
S. Byrappa
H. Wang
F. Wu
Y. Zhang
B. Raghothamachar
G. Choi
E.K. Sanchez
D. Hansen
R. Drachev
M.J. Loboda
6 more
Publication title:
Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1246
Pub. Year:
2010
Page(from):
29
Page(to):
36
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112237 [1605112232]
Language:
English
Call no.:
M23500/1246
Type:
Conference Proceedings

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