Defect Reduction in SiC Growth Using Physical Vapor Transport

Defect Reduction in SiC Growth Using Physical Vapor Transport

Author(s):

Darren M. Hansen

Publication title:

Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1246

Pub. Year:

2010

Page(from):

21

Page(to):

28

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112237 [1605112232]

Language:

English

Call no.:

M23500/1246

Type:

Conference Proceedings

Details

TDL ID:	ZA00050335
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium B
Conf. info. (Number):	2010
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2010.04.05-2010.04.09

Similar Items:

1 Conference Proceedings Boule Shape Dependence of Shear and von-Mises Stress Distributions in Bulk SiC during Sublimation Growth Roman V. Drachev, Darren M. Hansen, M.J. Loboda Materials Research Society	7 Conference Proceedings Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC Liu, J.Q., Sanchez, E.K., Skowronski, M. Trans Tech Publications
2 Conference Proceedings Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC Darren Hansen, Mark Loboda Materials Research Society	8 Conference Proceedings Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC Liu, J.Q., Sanchez, E.K., Skowronski, M. Trans Tech Publications
3 Conference Proceedings Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor MacMillan, M.F., Loboda, M.J., Chung, G., Carlson, E., Wan, J. Trans Tech Publications	9 Conference Proceedings Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals M. Dudley, S. Byrappa, H. Wang, F. Wu, Y. Zhang, B. Raghothamachar, G. Choi, E.K. Sanchez, D. Hansen, R. Drachev, M.J. … Materials Research Society
4 Conference Proceedings Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications	10 Conference Proceedings A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC Hansen, D.M., Chung, G., Loboda, M.J. Trans Tech Publications
5 Conference Proceedings 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer G.Y. Chung, M.J. Loboda, J. Zhang, J.W. Wan, E.P. Carlson Trans Tech Publications	11 Conference Proceedings The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth Heydemann,V.D., Rohrer,G.S., Sanchez,E.K., Skowronski,M. Trans Tech Publications
6 Conference Proceedings Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases M. J. Loboda, M. F. MacMillan, J. Wan, G. Chung, E. Carlson, Y. Makarov, A. Galyukov, M. J. Molnar Materials Research Society	12 Conference Proceedings A New Method of Mapping and Counting Micropipes In SiC Wafers Wan, J.W., Park, S.H., Chung, G., Carlson, E., Loboda, M.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12