Traps and Defects in AlGaN-GaN High Electron Mobility Transistors on Semi-Insulating SiC Substrates

Traps and Defects in AlGaN-GaN High Electron Mobility Transistors on Semi-Insulating SiC Substrates

Author(s):

Publication title:

III-nitride materials for sensing, energy conversion and controlled light-matter interactions : symposium held November 29-December 3, 2009, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1202

Pub. Year:

2010

Page(from):

119

Page(to):

126

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111759 [1605111759]

Language:

English

Call no.:

M23500/1202

Type:

Conference Proceedings

Details

TDL ID:	ZA00050320
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2009
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2009.11.29-2009.12.03

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