High Current Gain Triple Ion Implanted 4H-SiC BJT

High Current Gain Triple Ion Implanted 4H-SiC BJT

Author(s):

Publication title:

Reliability and materials issues of semiconductor optical and electrical devices and materials : symposium held November 29 - December 3, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1195

Pub. Year:

2010

Page(from):

197

Page(to):

200

Pages:

4

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111681 [1605111686]

Language:

English

Call no.:

M23500/1195

Type:

Conference Proceedings

Details

TDL ID:	ZA00050318
Series ID:	PA00000011
Conf. info. (Name):	MRS Fall Meeting
Conf. info. (Number):	2009
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2009.11.30-2009.12.03

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