Growth by Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production

Growth by Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production

Author(s):

Sergey V. Novikov

Publication title:

Compound semiconductors for energy applications and environmental sustainability : symposium held April 14-16, 2009, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1167

Pub. Year:

2009

Page(from):

39

Page(to):

46

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111407 [1605111406]

Language:

English

Call no.:

M23500/1167

Type:

Conference Proceedings

Details

TDL ID:	ZA00049474
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring meeting : Symposium O
Conf. info. (Number):	2009
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2009.04.14-2009.04.16

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