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Ultra-Low energy Ion Implantation of Si into HfO₂-based layers for Non Volatile Memory Applications

Author(s):
Pierre-Eugène Coulon
Kristel Chan Shin Yu
Gerard BenAssayag
Sylvie Schamm
Béatrice Pécassou
Abdelilah Slaoui
Sahu Bhabani
Marzia Carrada
Sandrine Lhostis
Caroline Bonafos
5 more
Publication title:
Materials and physics for nonvolatile memories : symposium held April 14-17, 2009, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1160
Pub. Year:
2009
Page(from):
3
Page(to):
10
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605111399 [1605111392]
Language:
English
Call no.:
M23500/1160
Type:
Conference Proceedings

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