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Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO₂ on In₀.₅₃Ga₀.₄₇As

Author(s):
Publication title:
CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1155
Pub. Year:
2009
Page(from):
111
Page(to):
118
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605111285 [1605111287]
Language:
English
Call no.:
M23500/1155
Type:
Conference Proceedings

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