Defects in HfO₂-Based Dielectric Gate Stacks

Defects in HfO₂-Based Dielectric Gate Stacks

Author(s):

Publication title:

CMOS gate-stack scaling--materials, interfaces and reliability implications : symposium held April 14-16, 2009, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1155

Pub. Year:

2009

Page(from):

3

Page(to):

14

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111285 [1605111287]

Language:

English

Call no.:

M23500/1155

Type:

Conference Proceedings

Details

TDL ID:	ZA00049467
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2009
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2009.04.14-2009.04.16

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