Low Temperature Si Homoepitaxy by a Reactive CVD with a SiH₄/F₂ Mixture

Low Temperature Si Homoepitaxy by a Reactive CVD with a SiH₄/F₂ Mixture

Author(s):

Publication title:

Amorphous and polycrystalline thin-film silicon science and technology--2009 : symposium held April 14-17, 2009, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1153

Pub. Year:

2009

Page(from):

187

Page(to):

194

Pages:

8

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605111261 [1605111260]

Language:

English

Call no.:

M23500/1153

Type:

Conference Proceedings

Details

TDL ID:	ZA00049465
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2009
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2009.04.14-2009.04.17

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