Low Resistance Ohmic Contacts Formation to p-Type GaN and AlGaN

Low Resistance Ohmic Contacts Formation to p-Type GaN and AlGaN

Author(s):

Indra Chary

Publication title:

Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1108

Pub. Year:

2009

Page(from):

169

Page(to):

174

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110806 [1605110809]

Language:

English

Call no.:

M23500/1108

Type:

Conference Proceedings

Details

TDL ID:	ZA00049377
Series ID:	PA00000011
Conf. info. (Name):	Materials Research Society meeting ; Symposium on performance and reliability of semiconductor devices
Conf. info. (Number):	2008
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	2008.11.30-2008.12.03

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