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Concentration-Dependence of Self-Interstitial and Boron Diffusion in Silicon

Author(s):
Wolfgang Windl  
Publication title:
Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1070
Pub. Year:
2008
Page(from):
285
Page(to):
290
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110400 [160511040X]
Language:
English
Call no.:
M23500/1070
Type:
Conference Proceedings

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