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Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers

Author(s):
Yonah Cho
Victor Moroz
Nikolas Zographos
Sunderraj Thirupapuliyur
Lucien Date
Robert Schreutelkamp
1 more
Publication title:
Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1070
Pub. Year:
2008
Page(from):
185
Page(to):
192
Pages:
8
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110400 [160511040X]
Language:
English
Call no.:
M23500/1070
Type:
Conference Proceedings

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