Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive

Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive

Author(s):

Publication title:

Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1069

Pub. Year:

2008

Page(from):

157

Page(to):

162

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110394 [1605110396]

Language:

English

Call no.:

M23500/1069

Type:

Conference Proceedings

Details

TDL ID:	ZA00049372
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2008
Conf. info. (Venue):	San Francisco, California, U.S.A.
Conf. info. (Date):	2008.05.25-2008.05.27

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