Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

Author(s):

Yoosuf N. Picard

Christopher Locke

Christopher L. Frewin

Rachael L. Myers-Ward

Publication title:

Advances in GaN, GaAs, SiC and related alloys on silicon substrates : symposium held March 24-28, 2008, San Francisco, U.S.A

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1068

Pub. Year:

2008

Page(from):

255

Page(to):

260

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605110387 [1605110388]

Language:

English

Call no.:

M23500/1068

Type:

Conference Proceedings

Details

TDL ID:	ZA00049371
Series ID:	PA00000011
Conf. info. (Name):	Materials Research Society meeting ; Symposium on advances in GaN, GaAs, SiC and related alloys on silicon substrates
Conf. info. (Number):	2008
Conf. info. (Venue):	San Francisco, California, U.S.A.
Conf. info. (Date):	2008.05.24-2008.05.28

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