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The Positive Gate Bias Annealing Method for the Suppression of a Leakage Current in the SPC-Si TFT on a Glass Substrate

Author(s):
Publication title:
Amorphous and polycrystalline thin-film silicon science and technology--2008 : symposium held March 25-28, 2008, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1066
Pub. Year:
2008
Page(from):
301
Page(to):
306
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605110363 [1605110361]
Language:
English
Call no.:
M23500/1066
Type:
Conference Proceedings

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