Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

Author(s):

Publication title:

Silicon-on-insulator technology and devices 13

Title of ser.:

ECS transactions

Ser. no.:

6(4)

Pub. Year:

2007

Page(from):

251

Page(to):

256

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775533 [1566775531]

Language:

English

Call no.:

E23400/6-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00047128
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	13th ; 211th
Conf. info. (Venue):	Chicago, Illinois, USA
Conf. info. (Date):	2007.05.06-2007.05.11

Similar Items:

1 Conference Proceedings Structural Properties of Tensile-Strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates J. Hartmann, A. Abbadie, D. Rouchon, Y. Guinche, P. Holliger Electrochemical Society	7 Conference Proceedings Effect of Sm on the Microstructure and Mechanical Property of Mg-xSm-0.4Zn-0.3Zr Alloys X. Su, D.J. Li, Y.C. Xie, X.Q. Zeng, W.J. Ding Trans Tech Publications
2 Conference Proceedings Wet-Cleaning and Surface Characterization of Si₁₋xGex Relaxed Alloys (x=0.2-0.5) After Polishing: Applications for SGOI and Strained Silicon Structures … A. Abbadie, J. M. Hartmann, P. Besson, D. Rouchon, P. Holliger, C. Di Nardo, T. Lardin, Y. Campidelli, B. Ghyselen, T. … Electrochemical Society	8 Conference Proceedings Effect of Annealing on Microstructure and Tensile Properties of Ti-6.5Al-2Sn-4Zr-2Mo-2Nb-1W-0.2Si Alloy W.J. Zhang, X.Y. Song, S.X. Hui, W.J. Ye Trans Tech Publications
3 Conference Proceedings UV and Visible Raman Spectroscopy Applied to sSi/Si_1-xGe_x and sSOI Stacks D. Rouchon, J. Hartmann, A. Crisci, M. Mermoux Electrochemical Society	9 Conference Proceedings SUPERCONDUCTING AND STRUCTURAL PROPERTIES OF THE (Ba0.6K0.4)(Bi1-ySby)O3 SYSTEM Dabrowski, B., Pei, S., Richard, D.R., Zheng, Y., Jorgensen, J.D., Hinks, D.G., Kimball, C.D., Mitchell, A.W. Materials Research Society
4 Conference Proceedings Growth Kinetics and Boron-Doping of Vety High Ge Content Si₁₋xGex for Sources and Drains Engineering J. Hartmann, F. Gonzatti, J. Barnes, F. Fillot, T. Billon Electrochemical Society	10 Conference Proceedings AS-GROWN SUPERCONDUCTIVITY OF Bi-SYSTEM THIN FIMLS PREPARED BY MAGNETRON SPUTTERING WITH THREE PB DOPED TARGETS: … Kuroda, Ken'ichi, Tanioku, Masami, Kojima, Kazuyoshi, Hamanaka, Koichi Materials Research Society
5 Conference Proceedings Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study D. Rouchon, V. Destefanis, J. Hartmann, A. Crisci, M. Mermoux Electrochemical Society	11 Conference Proceedings Structural and Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films Q. X. Jia, J. S. Lee, B. H. Park, P. Liu Electrochemical Society
6 Conference Proceedings Structural and ferroelectric properties of epitaxial La0.5Sr0.5CoO3/Ba0.4Sr0.6TiO3/La0.5Sr0.5CoO3 thin-film capacitors on silicon for DRAM applications Kung, Pang-Jen, Fenner, David B., Li, Qi Materials Research Society	12 Conference Proceedings Study on Preparation of LiNi_0.5Co_0.2Mn_0.3O₂ Precursor-Spherical … X.L. Qu, Z.F. Zhang, J. Cheng, X.Y. Wang Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12